Abstract
We study the thermal noise characteristics of the scaled MOSFET devices using the hydrodynamic transport model and the Green's function technique. We compare the result of the hydrodynamic model with that of the drift-diffusion model and study the effect of the nonlocal transport on the drain noise current for the NMOSFET with the L met (determined by the metallurgical junctions) about 40 nm. It is found that the nonlocal transport effect broadens the effective vector Green's function and increases the responses of the electrostatic potential and the electric field at the entrance of the channel, which can directly influence the drain noise current. We also study the effect of the spatially nonuniform energy relaxation time on the noise characteristics and find that the region with larger energy relaxation time is less sensitive to the velocity fluctuation noise.
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