Abstract
In this paper, heterojunction nanowires of NiSe are fabricated via template -assisted electrodeposition process. Nanowires are characterized by scanning electron microscopy (SEM), Energy dispersive X -Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies. SEM photographs reveal the uniform and dense growth of Ni -Se nanowires. X-ray diffraction pattern shows the crystalline nature of Ni -Se nanowires. EDS spectrum shows the much higher percentage of Ni as compared to Se. A collective current-voltage characteristic of heterojunction nanowires shows the resonant tunneling diodes (RTDs) like behavior with peak to valley current ratio 1.37 at room temperature.
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