Abstract
A semiconductor p-n junction diode with heavy doping under consideration is kept in forward biased condition. These are oppositely propagating electron and hole currents. These two streams interact among themselves and result in recombination, which supplies additional energy to the system. Such thermal energy creates additional electrical fluctuations, which exists long after the interaction has taken place. We have carried out an analytical investigation with numerical techniques as well as carried out a simulation of the wave–wave interaction in semiconductor junction diodes. In terms of signal transmission and operation of semiconductor device, such a theoretical study is important.
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