Abstract
A two-dimensional numerical simulation program is proposed which enables the concentration profiles of diffused dopants in semiconductors to be calculated. This program takes the nonlinear phenomena typical of high concentrations into account; however, since the corresponding nonlinear diffusion model is made quasi-linear by means of a suitable transformation of the variable, it becomes almost as easy and efficient as a linear numerical simulation program. The numerical algorithm developed is based on the finite difference Alternating Direction Implicit (ADI) method proposed by Peaceman and Rachford. As a practical application, the two-dimensional doping profiles of arsenic into silicon are calculated for a predeposition process and for a drive-in process following an ion implantation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
