Nonlinear transport properties of III-nitrides in electric field

Abstract

We consider the transport properties of polar direct-gap semiconductors in an electric field, specializing the numerical calculation of the general theory to the case of n-doped III-nitrides, in particular, GaN, AlN, and InN. The nonequilibrium thermodynamic state of these materials—characterized by the variables so-called quasitemperature, quasichemical potential, and drift velocity of the carriers, and the quasitemperatures of longitudinal optical and acoustical phonons—is studied. The evolution equations of these variables—which are highly nonlinear—are derived, and the transient regime and the ensuing steady state are analyzed. The nonlinear transport is characterized and its main properties are discussed. In one case comparison with a recent Monte Carlo calculation is made and good agreement is obtained. In this paper we mainly consider the ultrafast transient, and in the following paper the steady state.