Abstract
The nonlinear electronic tunneling through ferromagnet (FM)/insulator (I)/FM single-barrier and FM/I/FM/I/FM double-barrier magnetic layered structures is studied using the Landauer-B\uttiker scattering approach. For the single-barrier junctions, the resulting bias dependence of tunnel magnetoresistance is qualitatively in agreement with experimental observation. The absolute value of magnetoresistance is shown to be enhanced in the double-barrier systems. Under suitable conditions, large negative and positive magnetoresistance effects occur alternately with increasing bias voltage. These features make double-barrier resonant-tunnel structures more attractive magnetoresistance devices.
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