Abstract
Using a nonlinear transport theory, derived from the nonequilibrium statistical operator method, we obtain the equations that govern the evolution of the nonequilibrium state of a highly photoexcited direct-gap polar semiconductor, and its nonequilibrium mobility coefficient. It provides an analytic method that allows for a deep physical insight into the influence of the nonequilibrium irreversible evolution of the plasma in the semiconductor on its transport properties. We demonstrate that, under quite general conditions, the strong dependence of the momentum and energy relaxation times on the irreversible evolution of the macroscopic nonequilibrium state of the system results in the existence of a structured transient mobility,i.e. one with maxima and minima, with or without overshoot. A criterion for the occurrence of this structure is derived as well as several general properties of the ultrafast transient are discussed.
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