Abstract
AbstractStrained-silicon (ε -Si) is essential for future nanoscale MOSFET devices. In this paper we report on the dynamics of strain relaxation in Si/SiGe heterostructures, investigated by transient nonlinear finite element analysis. The contribution to total misfit strain is found largely plastic in the graded SiGe layer and the top of the Si substrate, while it is mainly elastic in the strained Si layer and part of the SiGe constant layer. The calculated lattice parameter for the strained Si layer is about 5.47Å for Si0.8Ge0.2 and 5.52 Å for Si0.6Ge0.4. Calculated threading dislocation density was about 5.6x105 cm-2 for x=0.20 and 2.17x106cm-2 for x=0.40. A plastic strain rate of 8.4x10-3s-1 for Si0.8Ge0.2 and 4.1x10-2 s-1 for Si0.6Ge0.4 leading to a density of moving dislocations of ~2.2x109 cm-2 and ~ 1010cm-2, respectively, have been obtained. The elastic strain in the strained-Si layer appeared to increase with increasing the cooling rate, while plastic work was found to be independent of cooling rates.
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