Abstract
Third harmonic generation (THG) is a nonlinear optical phenomenon which can be applied in diverse research areas including interfacial studies, sub-wavelength light manipulation, and high sensitivity bio-molecular detection. Most precedent studies on THG have focused on dielectric and metallic materials, including silicon, gold, and germanium, due to their high nonlinear susceptibility. Sapphire, a widely-used optical substrate, has not been studied in depth for its third harmonic characteristics, despite its excellent optical transmission in the UV-visible range, high thermal conductance, and superior physical and chemical stability. In this research, we comprehensively studied THG at thin air-dielectric interfaces of sapphire wafers by controlling the wafer cutting planes, focusing depth, incidence angle, laser intensity, and input polarization of the input laser beam. These findings can lead to broader use of third harmonics for high-precision sapphire characterization, such as surface quality inspection, crystallinity determination, interfacial studies, delamination check, and real-time monitoring of crack propagation.
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