Abstract

We present a simple analytical nonlinear theory for quantum diodes in a dense Fermi magnetoplasma. By using the steady-state quantum hydrodynamical equations for a dense Fermi magnetoplasma, we derive coupled nonlinear Schrödinger and Poisson equations. The latter are numerically solved to show the effects of the quantum statistical pressure, the quantum tunneling (or the quantum diffraction), and the external magnetic field strength on the potential and electron density profiles in a quantum diode at nanometer scales. It is found that the quantum statistical pressure introduces a lower bound on the steady electron flow in the quantum diode, while the quantum diffraction effect allows the electron tunneling at low flow speeds. The magnetic field acts as a barrier, and larger potentials are needed to drive currents through the quantum diode.

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