Abstract
The dependences of the efficiency η of self-diffraction of picosecond pulses on their frequency detuning Ω were determined for Pr—Ba—Cu—O semiconductor films. These dependences were similar to those already reported (for Ni and Y—Ba—Cu—O in the resistive phase) and had a central peak (η ~ 10-7 for ≤ 10 cm-1) and wide wings (η ~ 10-9 for ≥ 10 cm-1) with a jagged profile because of phonon resonances. An analysis was made of the causes of this similarity, of the asymmetry of η(Ω) relative to the sign of η, and of specific temperature effects. Although the position of a combination electron resonance (interband transition edge) of Pr—Ba—Cu—O was within the range of variation of η, its identification was complicated by the presence of nearby (on the scale of Ω) phonon modes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.