Nonlinear self-interaction of surface magnetoplasmons at the interface between a narrow-gap electron semiconductor and a metal

Abstract

The nonlinear self-interaction of surface magnetoplasmons (SM) propagating across an external magnetic field at an n-type semiconductor-metal interface is considered. The studied nonlinearity is due to the nonparabolicity of the free carriers spectrum. The self-interaction of the SM is shown to be different in semiconductors with normal and inverse band structures. The results of the SM field envelope evolution are given. The action of the studied nonlinearity is shown to be most significant in narrow-gap semiconductor materials.