Nonlinear response and driven chaos in n-type GaAs compensated with Ni impurities.

Abstract

We consider the dynamical behavior of nonlinear carrier transport for n-type GaAs compensated with Ni deep impurities at room temperature under the application of both dc and ac biases. The stability properties of the fixed points of the system are studied when only a dc bias is applied. When both dc and ac biases are applied simultaneously, the system exhibits richness of bifurcation features such as the amplitude of the ac bias varies continuously while the dc bias is kept fixed at a suitable value. These features include period-doubling cascade, type-I and -III intermittencies, period-3 and -5 windows, and the coexistence of different attractors in the same positive differential conductivity region.