Abstract
The trend towards increasing blocking voltage of high power Insulated Gate Bipolar Transistor (IGBT) modules is challenging for their electric insulation system. In particular, the electric field at the edges of the substrate metallization increases accordingly and can exceed the dielectric strength of the gel commonly used as encapsulation, leading to partial discharges or even breakdown of the insulation. This paper reports on the use of nonlinear resistive field grading to mitigate the electric field within power electronic modules. Finite element simulations show how the field enhancements can be significantly reduced by applying a functional coating with suitable nonlinear resistive characteristic. Coatings made of polyimide filled with ZnO microvaristors were manufactured and tested.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Dielectrics and Electrical Insulation
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
