Abstract
AbstractNonlinear dielectric properties of the dipole layer formed at the catalytic metal/insulator interface of MOS‐based hydrogen sensors are investigated. A two‐valley potential profile is used to model electronic states in adsorbed H atoms polarized by difference in electron affinities between metal and oxide and to derive constitutive equation expressing dielectric polarization P as a function of applied electric field E. An up‐to‐fourth order expansion of this dependence is given, using modified dielectric susceptibilities. Application of superposed static and alternating fields leads to a significant third harmonic generation. The expressions derived could help to design experiments yielding values of parameters characterizing the dipole layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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