Abstract
We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We characterize the linear and nonlinear properties of these waveguide structures. Waveguides with a linear loss of 12 dB/cm and which are coupled to a single mode fiber through gratings with a -7.5 dB coupling loss are realized. From four wave mixing experiments, we extract the real part of the nonlinear parameter γ to be 475 ± 50 W(-1)m(-1) and from nonlinear transmission measurements we infer the absence of two-photon absorption and measure a three-photon absorption coefficient of (2.5 ± 0.5) x 10(-2) cm(3)GW(-2).
Highlights
Silicon-on-insulator (SOI) has become a very popular platform for various applications of integrated optics, especially in the field of telecommunications, and in other fields like spectroscopy and sensing [1,2,3,4,5,6,7,8,9,10,11,12]
We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window
Previous studies have explored the nonlinear properties of photonic wire waveguides and photonic crystal waveguides realized on their III-V growth substrate based on different III-V materials, including InGaP, for a range of nonlinear optics applications [14,15,16,17,18,19, 22]
Summary
Silicon-on-insulator (SOI) has become a very popular platform for various applications of integrated optics, especially in the field of telecommunications, and in other fields like spectroscopy and sensing [1,2,3,4,5,6,7,8,9,10,11,12]. Because the high index contrast allows large field intensities inside the waveguides, and since silicon has a large third-order susceptibility (n2 = 4x10-18 m2/W), the SOI platform has been investigated for many nonlinear optics based applications [4,5,6,7,8,9,10] Despite these advantages, silicon is not the ideal material for many nonlinear applications because it suffers from large nonlinear losses in the telecom wavelength region due to two-photon absorption and the resulting free-carrier absorption (TPA and FCA). Some III-V material compositions such as InGaP or AlxGa1-xAs (both grown on a GaAs substrate) have the advantage that the halfbandgap is larger than the photon energy in the telecommunications wavelength range and so should not suffer from TPA This allows for efficient nonlinear optical processes in the telecommunication wavelength range. We confirm the absence of two-photon absorption and measure the three-photon absorption coefficient through nonlinear transmission measurements
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