Abstract
An investigation was made of the longitudinal and transverse piezoresistance and electrical conductivity of p-type silicon under conditions of uniaxial compression, x‖ [111], in the temperature range 77–300°K and hole concentration range 2.1015−5.1018 cm−3. The transverse component of the electrical conductivity tensor, ‖ [11¯2], was found to depend nonmonotonically on the degree of compression. Compression decreases π44 and increases the combination π11+ 2π12. The nonlinearity oi the longitudinal piezoresistance increases with increasing hole concentration and T = 77°K. The results are explained by the rearrangement of the valence band under the deformation and the formation near the top of this band of a section of the spectrum described in the approximation of “low” energies of Pikus-Bir theory.
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