Abstract
The performances of a dual-pump parametric and Raman amplification process and the wavelength conversion in silicon waveguides are investigated. By setting the Raman contribution fraction f to be 0.043 in our analytical model, the amplification gain of the probe signal can be obtained to be over 10 dB. The pump transfer noise (PTN), the quantum noise (QN), and the total noise figure (TNF) are discussed, and the TNF has a constant value of about 4 dB in the gain bandwidth. An idler signal generated during the parametric amplification (PA) process can be used to realize the wavelength conversion in wavelength division multiplexing (WDM) systems. In addition, the pump signal parameters, the generated free carrier lifetime and effective mode area (EMA) of the waveguide are analysed for the optimization of signal gain and noise characteristics.
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