Nonlinear optics properties of Ni-Sb2Se3 nanofilms in the near-infrared region.

Abstract

S b 2 S e 3 is an emerging material in recent years, and past studies have shown that it has good optoelectronic properties when doped with metals. In this paper, pure S b 2 S e 3 films and N i-S b 2 S e 3 films with different doping contents (1, 2, 3W) were prepared by magnetron sputtering technology. The nonlinear optics properties of the sample films were investigated using femtosecond (fs) Z-scan technology under 800nm. The results showed that both pure S b 2 S e 3 and doped films exhibited reverse saturated absorption (RSA), and the occurrence of the reverse saturated absorption behavior of the doped films was mainly due to two-photon absorption (TPA), free carrier absorption (FCA), and the presence of defective energy levels. Compared with pure S b 2 S e 3 films, N i-S b 2 S e 3 films exhibit significantly enhanced nonlinear absorption properties and nonlinear refractive properties. By increasing Ni sputtering power and incident laser energy, the nonlinear optic properties of N i-S b 2 S e 3 films are enhanced. By testing the sample films using SEM, XRD, and UV-Vis techniques, we found that Ni metal doping greatly improved and optimized the crystallinity of the films and adjusted the optical band gap.