Abstract

Saturation spectra of the excitons confined and localized at several kinds of stacking disorders in layered crystal BiI 3 are studied. The quasi-two dimensional exciton localized at the stacking fault interface does not saturate its absorption strength below the density of 10 5 W/cm 2 due to the large binding energy and the lateral center-of-mass motion along the interface. On the exciton system associated with some polytypic structures contained in a very small region, an obvious absorption saturation is observed. The behaviour of absorption saturation is well described by a saturation erect on a simplified two-level system having a homogeneous line broadening. An absorption saturation is also observed on the confined excitons in mesoscopic domains induced by the external deformation of the crystal. The pumping-laser photon-energy dependence of the saturation density characterizes this exciton system to be inhomogeneous

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