Abstract
The absolute value of the third-order nonlinear optical susceptibility, ¦χ(3)¦, of Sn+ ion-implanted silica glass was found to be ∼ 10−6 esu. This value is as large as those reported for semiconductor-doped glasses. Silica glass substrates were implanted with Sn+ ions at an acceleration energy of 400 keV to a dose of 2 × 1017 ions/cm2 at room temperature. Metallic Sn microcrystallites of 4–20 nm in diameter were found to be embedded in the silica glass matrix. The average volume fraction of the Sn microcrystallites was evaluated to be 28%. ¦χ(3)¦and the imaginary part of the dielectric function, Im ϵ, had peaks at the same wavelength of 500 nm owing to surface plasmon resonance. The peak width of ¦χ(3)¦was nearly half of that of Im ϵ, which can be explained by an effective medium theory.
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