Abstract
This paper summarizes the peculiarities of the nonlinear interaction of laser pulses with the noncrystalline semiconductors (chalcogenide glasses (ChG), a-Si:H), showing that noncrystalline semiconductors (NS) are an interesting material for high-speed optoelectronics. The physical mechanisms which can contribute to the nonlinear light absorption in NS under pulsed excitation are critically reviewed. The results of photo-induced absorption (PA) measurements in ChG are examined and a model taking into account the multiple trapping of carriers on localized states is proposed as an explanation.
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Schedule a callMore From: Pure and Applied Optics: Journal of the European Optical Society Part A
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