Abstract
We have evidenced the high sensitivity of infra red-induced second harmonic generation (IR-ISHG) to the structural changes that occurred in amorphous hydrogenated silicon films (a-Si:H) prepared by Rf-glow discharge technique at different substrate temperatures and doping types. In every case, a maximal signal of the IR-induced SHG is achieved at a temperature of about 110K and pump–probe delaying time about 22–38ps. This one indicates a marked effect of doped subsystems in the observed non-linear optical effects. A tremendous effect of doping is established from a drastic change of the IR-induced SHG behavior presenting an anomaly at about 400MW/cm2 for a pumping power with wavelength 3.7μm. A minimum of the SHG is observed in that case for standard non-doped films. Note here that the doping type does not markedly affect the behavior of the second-order non-linear optical susceptibility. The thermo-annealing leads to a slight decrease of the effective second-order susceptibilities. More drastic changes are observed with doped samples for the pump-probe delaying time from about 39 till 24ps.
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