Abstract
The nonlinear optical properties and ultrafast optical response of Si/SiO2 multilayers with and without phosphorus doping are comparatively studied in the present work. The enhanced nonlinear absorption and fast recombination process were observed after phosphorus doping, the defect states generated by high phosphorus doping was the possible origination. It was suggested that the nonlinear optical repose as well as the ultrafast dynamic process could be changed greatly via phosphorous doping, which provided a new approach to improve the performance of Si-based photonic devices.
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