Abstract
Previous simulations of the transport in a n-GaAs n+nn+ diode structure using both moments of the Boltzmann equation and a Monte Carlo particle-field self-consistent approach suggest that submillimeter-wave generation may be possible only at cryogenic temperatures. These simulations employed only modest ac signal levels compared to the dc value. Here the terminal admittance behavior is examined for truly large signal levels, up to 100% of the dc value. It seems that such large signal conditions suppress the appearance of negative conductance in the submicron diode.
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