Abstract
A nonlinear integral approach is adopted for the modeling of Dual-Gate GaAs MESFET's (DGFET's) in the framework of Harmonic-Balance circuit analysis. In particular, the model enables the computation of the large-signal performance of DGFET's directly on the basis of DC characteristics and small-signal bias-dependent admittance parameters without requiring complex procedures for parameter extraction. The validity of the approach is confirmed by accurate physics-based numerical simulations of a DGFET mixer.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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