Abstract
In this paper, an empirical nonlinear model for high electron mobility transistors (HEMTs) is presented. Unlike the conventional large-signal models whose fitting parameters are coupled to the measured I-V and C-V characteristics, the proposed modeling equations are direct formulated from the second-order derivative of drain current (I-V) and gate charge (Q-V) with respect to gate voltage. As a consequence, the proposed large-signal model is kept continuously differentiable and accurate enough to the higher-order I-V and Q-V derivatives. Measured and modeled results are compared for the 0.25µm gate-length GaAs pseudomorphic HEMTs (pHEMTs), and good agreement is obtained.
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