Abstract
Gain-coupled distributed-feedback (GC-DFB) effects in a V-grooveIn0.2Ga0.8As/Al0.2Ga0.8As quantum-wire (QWR) array are investigated by comparison with those in aGaAs/Al0.2Ga0.8As QWR array. Temperature-dependent photoluminescence (PL) spectra are measured forboth samples, showing that the PL spectra from the QWRs are much stronger than thosefrom the quantum wells (QWs) in the entire temperature region. Then, InGaAs/AlGaAsQWR GC-DFB lasers are fabricated by one-step metallorganic chemical vapour deposition(MOCVD) growth and characterized. As a result, strong nonlinearity in the emissionspectra by optical feedback along the DFB directions is clearly observed near the thresholdcurrent, indicating that a V-groove InGaAs QWR array is a good candidate for again-coupled DFB laser.
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