Abstract
Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.
Highlights
During the past decade, dilute nitrides, the quaternary material system of GaInNAs/GaAs, have attracted a great deal of attention, both because of unusual physical properties and potential applications for a variety of optoelectronic devices
High hole mobility coupled with the low hole confinement energy (110 meV in our calculation for the samples investigated in this study) [1] in the GaInNAs/GaAs quantum well (QW) structure makes it possible for holes in the well to gain enough energy to overcome the small band discontinuity under an electric field applied parallel to the layer interface, and to transfer into the low-mobility p-doped GaAs layer
The simulation results of the steady-state predict an negative differential mobility (NDM) induced by real-space transfer (RST) of hot holes in the QWs and the critical electric field of the onset of NDM to be the order of 6 kV/cm
Summary
Dilute nitrides, the quaternary material system of GaInNAs/GaAs, have attracted a great deal of attention, both because of unusual physical properties and potential applications for a variety of optoelectronic devices. Under dc conditions, a self-generated current oscillation in the real-space regime, as proposed by Schöll and co-authors [2,3,4,5], is expected in p-modulation-doped GaInNAs/GaAs heterostructures. We study the nonlinear charge transport in a modulation-doped GaInNAs/GaAs semiconductor heterostructure where the GaAs barrier layer is intentionally p-doped.
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