Abstract
A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the above-mentioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold.It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.
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