Nonlinear diffraction in orientation-patterned semiconductors.

Pawel Karpinski,Yan Sheng,Wieslaw Krolikowski,Xin Chen,Eric Lallier,Barry Luther-Davies,Vladlen Shvedov,Cyril Hnatovsky,Arnaud Grisard

doi:10.1364/oe.23.014903

Abstract

This work represents experimental demonstration of nonlinear diffraction in an orientation-patterned semiconducting material. By employing a new transverse geometry of interaction, three types of second-order nonlinear diffraction have been identified according to different configurations of quasi-phase matching conditions. Specifically, nonlinear Čerenkov diffraction is defined by the longitudinal quasi-phase matching condition, nonlinear Raman-Nath diffraction satisfies only the transverse quasi-phase matching condition, and nonlinear Bragg diffraction fulfils the full vectorial quasi-phase matching conditions. The study extends the concept of transverse nonlinear parametric interaction toward infrared frequency conversion in semiconductors. It also offers an effective nondestructive method to visualise and diagnose variations of second-order nonlinear coefficients inside semiconductors.

Highlights

Over the past decade, significant progress has been achieved in functionalizing III-V semiconductors to emit, manage, and detect light for laser and photonic applications
quasiphase matching (QPM) in OP-gallium arsenide (GaAs) has been employed to demonstrate a number of second-order nonlinear optical effects, including second harmonic generation (SHG) [2, 12]; cascaded third harmonic generation [13]; optical parametric amplification [14]; mid-infrared continuum generation [15]; and terahertz generation based on intracavity parametric down-conversion [16]
We have presented the nonlinear diffraction in a orientation-patterned GaAs (OP-GaAs) crystal

Summary

Introduction

Significant progress has been achieved in functionalizing III-V semiconductors to emit, manage, and detect light for laser and photonic applications. QPM in OP-GaAs has been employed to demonstrate a number of second-order nonlinear optical effects, including second harmonic generation (SHG) [2, 12]; cascaded third harmonic generation [13]; optical parametric amplification [14]; mid-infrared continuum generation [15]; and terahertz generation based on intracavity parametric down-conversion [16] Cerenkov SHG (CSHG) becomes observable when the longitudinal QPM condition is fulfilled, i.e. k2 cos θ − 2k1 = 0 [see Fig. 1(d)] Such noncollinear interactions are of great interest because of their potential applications in all-optical signal processing. Unlike traditional diagnostic techniques based on scanning electron microscopy or optical microscopy, which require cutting, polishing and etching of the samples, the Cerenkov-based technique is unique as it is nondestructive and enables one to characterise the QPM structure everywhere in the bulk of the sample

The orientation-patterned GaAs sample

Nonlinear diffraction from multiple domains in OP-GaAs

Cerenkov SH emission from a single domain wall in OP-GaAs

F Ob2 OP-GaAs

Three-dimensional visualisation of orientation-patterned GaAs

Conclusions