Abstract

SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current—voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current—voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current—voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current—voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent ∑ 1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.

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