Abstract
The I-V characteristics of double-layered films with ZnO/R x O y (R = La, Ce, Pr, Nd) structures fabricated by RF sputtering technique were studied. Any double-layered films show asymmetric and nonlinear current-voltage (I-V) characteristics. Especially ZnO/Pr 6 O 11 film exhibits good varistor properties (nonlinear coefficient, α = 30 and breakdown voltage, V b = 12.5 V). Nonlinear I-V characteristics are originated from Schottky barrier of 0.8 eV at the interface of ZnO/R x O y films
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