Abstract
We report an experimental measurement of nonlinear dc current-voltage ( I–V) characteristics in p-type Ge extrinsic photoconductors at liquid He temperatures which exhibit a region of voltage-controlled negative differential resistance (NDR) above the threshold for impurity breakdown, accompanied by a spontaneous current oscillation of frequency f s ∼ 5 to 10 kHz. The dc I–V characteristics are well explained in terms of a simple rate equation model and, it is argued, the spontaneous current oscillations are due to moving space charge waves which arise from a negative differential rate of impurity impact ionization.
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