Nonlinear conductivity of thin semiconductor layers with a dimensionally quantized electron energy spectrum

Abstract

UDC 537.311.33 The nonlinear transverse conductivity of thin semiconductor layers with a dimensionally quantized energy spectrum of the transverse motion of the electrons in the frequency region co, which is less than the characteristic distances between the dimensional quantization levels ~2 and arbitrary with respect to the reciprocal relaxation time of the population of these levels T(r), is obtained. The electron scattering is assumed to be quasielastic. The conductivity of these layers is mainly reactive, extremely nonlinear, and contains sections of negative dynamic differential conductivity. At low temperatures and frequencies (c0T(r) > 1 the current is extremely nonlinear and is reactive. When the frequency of the field is increased, the value of the current and capacitance jumps fails, and time oscillations of the current occur at frequencies ~tkn.