Abstract
We have studied the nonlinear conductivity and the accompanied broad band noise of monoclinic TaS 3 . The noise voltage becomes maximum just above the threshold field E T of the nonlinear conduction. For comparison, the same measurements were made for NbSe 3 and the similar results were obtained. The generation of broad band noise is explained in terms of two valued process, and the number of degrees of freedom of the CDW motion, N , is estimated to be 10 9-10 /cm 3 in both of monoclinic TaS 3 which is semiconducting at low temperatures, and NbSe 3 which is metallic. This result indicates that the motion of the CDW's is not described as that of a rigid body. N is found to decrease with decreasing temperature in monoclinic TaS 3 .
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