Abstract
The conductance of geometrically asymmetric quantum point contacts formed in 2D electron gas (2 DEGs) in GaAs/(AlGa)As heterojunctions has been studied as a function of the applied bias and magnetic field. The nonlinear conductance is found to be independent of bias direction in zero magnetic field in agreement with other workers but at higher magnetic fields the I(V) curves are highly asymmetric in terms of both the onset and the type of nonlinearity observed. The curves are described using simple theory. The same experimental arrangement is also used to study nonlinearity in the quantum Hall regime when the device acts as an adjustable, narrow channel. The nonlinearity is qualitatively different to the first case and there are discontinuous changes in the dissipation which the authors identify with scattering between magneto-electric subbands.
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