Abstract
AbstractIt is shown that the specific interference of elastic scattering of electrons by impurity atoms and inelastic scattering of electrons by phonons, taking into account a real angular and energy dependence of the electron distribution function, results in a strongly nonlinear concentration dependence of the electron part of the thermal resistivity of a metal. The curve showing the temperature dependence of the inelastic part of the impurity thermal resistivity has a peak whose value depends on the concentration c of impurities. Simultaneously the coefficient B in the usual low‐temperature representation of the thermal resistivity, BT2, is also found to depend on c. A comparison with the experimental data is made.
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