Abstract
We fabricated nanoscale field-effect transistors based on Y-junction single-walled carbon nanotubes (SWCNTs) and characterized their performance. The Y-junction transistor was modulated by a metallic branch of the Y-SWCNTs and exhibited the characteristics of an ambipolar field-effect transistor (FET) at room temperature. We obtained a subthreshold swing of 700mV∕decade and an Ion∕off ratio of 105 with a low off-state leakage current of ∼10−13A. These results are of fundamental interest in nano-FET as well as CNT-mat study and may suggest reliable applications in nanoelectronics and sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
