Abstract
An experimental study and theoretical modeling of the nonlinear changes in transmission coefficient and refractive index of mono-crystalline Silicon (Si) at long-pulse, mJ-range, single-beam Z-scan probing at 1.54 μm wavelength are reported. It is shown experimentally that at increasing pulse energy density the photo-induced darkening permanently increases in Si while its photo refraction properties demonstrate a more complicate character, being a product of various type nonlinearities. A theoretical analysis based on simple assumptions of a square-shape pulse in the time domain and Gaussian spatial distribution of the probe beam allows fitting of a whole of the experimentally measured open- and closed-aperture Z-scans through an account of the main contributions in the light-induced absorption and refractive index nonlinearities. These are revealed to originate from non-direct two-photon absorption and Kerr effect, induced absorption and dispersion of light-generated free carriers, and light-induced thermal lensing.
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