Abstract
InSe:Ho (%0.005) and InSe:Ho (%0.05) single crystals were grown using the Bridgman–Stocbarger method. The nonlinear and saturable absorption characteristics of InSe:Ho (%0.005) and InSe:Ho (%0.05) single crystals were investigated by open aperture Z-scan technique with 4ns and 65ps pulse durations at 1064nm. Both crystals show nonlinear absorption for 4ns pulse duration at low and high input intensities. However, picosecond measurements show saturable absorption behavior at low input intensities while nonlinear absorption becomes dominant at high input intensities. This indicates that the life time of the doping states is shorter than 4ns pulse duration. Saturable absorption behavior can be attributed to filling of the doping states. Our results show that nonlinear absorption coefficient increases with increasing Ho concentration due to increasing of free carrier concentration.
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