Abstract
In recent years, new energy vehicles, photovoltaic power stations, communication base stations, energy storage systems, and other power electronic systems have developed rapidly. The development of these systems has the trend of continuously increasing the power density per unit area, reducing the system volume, and continuously increasing using the busbars. More and more new current sensors will be used in these systems and play a key role. Traditional current sensor cannot meet the development trend of power electronic systems due to their large size and high cost. In this paper, a new small coreless tunnel junction magnetoresistance (TMR) busbar dc current sensor adopted differential scheme which improves the sensor’s anti-interference ability that is designed. The current sensor adopts an open-closed structure for easy nonintrusive installation. Four TMRs which adopted differential structure are placed on the edges of the busbar. The peak current measurement range is ±600 A, the rated current measurement range is ±300 A, and the supply voltage is 5 V.
Highlights
Due to its noncontact isolation measurement, high precision, and low cost [1, 2], current sensors are widely used in power electronic systems, such as photovoltaics, wind power, and electric vehicles, and the use of current sensors has increased year by year
anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), and tunnel junction magnetoresistance (TMR) have been used in current sensors [3,4,5,6]
We present a new small volume current sensor with the characteristics of the nonintrusive installation
Summary
Due to its noncontact isolation measurement, high precision, and low cost [1, 2], current sensors are widely used in power electronic systems, such as photovoltaics, wind power, and electric vehicles, and the use of current sensors has increased year by year. A magnetic field is generated by the measured current. The latest research in this field mainly includes anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), and TMR. AMR, GMR, and TMR have been used in current sensors [3,4,5,6]. Hall has the inherent defects of low sensitivity, high power consumption, and poor linearity. The sensitivity of AMR and GMR is much higher than that of hall, their linear range is narrow. AMR, and GMR, TMR has better temperature stability, higher sensitivity, lower power consumption, and better linearity. The conventional busbar current sensor with differential structure adopts a pair of hall sensors on the conductor surface, which partially suppresses the external magnetic field [7,8,9]. The magnetization direction of the pin layer is fixed, and the magnetization direction of free layer changes with the direction of the external magnetic field
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