Abstract
The anti-Stokes Raman scattering of a-Si and a-Si:H is studied at T=2 K for intense (∼1 mJ/mm 2 ) pulsed optical excitation. It is found that high-energy phonons (hω>100 cm -2 ) emitted as a result of carrier relaxation possess a nonequilibrium energy distribution. A time-resolved study of the Raman signals reveals relaxation time constants for 480-cm -1 phonons as long as 1B ns. The effect of phonon localization is suggested as an explanation of the experimental results
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
