Abstract
Abstract A new approach in modelling of ion-beam-induced amorphization-crystallization processes in semiconductors based on the conception of non-equilibrium (kinetic) phase transitions and stochastic processes is presented. Using previously proposed “structural” mechanism of the “amorphous state” ↔ “crystalline state” phase transitions, which occur with the participation of point defects within the semiconductor lattice, the kinetic equations for the main variables describing the non-equilibrium transformations in the open system “ion beam + semiconductor” are received and analyzed.
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