Nonequilibrium carrier transport in III–V compounds at low lattice temperatures

Abstract

The effect of finite energy of the deformation potential and piezoelectric acoustic phonons on the electric field dependence of the effective temperature of the nonequilibrium carriers in n-type InSb and InAs has been calculated here by a numerical method for low lattice temperatures taking the nonparabolicity of the conduction band into account. Unlike the traditional method of neglecting the phonon energy in comparison to the carrier energy the calculations are carried out here under the condition that the acoustic phonon energy can neither be neglected nor the phonon distribution be represented by the equipartition law. The results are significantly different from those that follow from the traditional approach and are found to be in good agreement with the experimental data.