Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures

Abstract

In this article we present a low-frequency capacitance-voltage technique for determining the effective concentration of vacant deep traps at the film–buffer layer interface in a thin-film GaAs structure. This effective concentration is an index of the overall effect of vacant deep traps in both the buffer layer and substrate on the current transport in the film. The technique can be used for quality control of film–buffer layer–substrate GaAs wafers prior to device making.