Abstract
The paper deals with the study of the roughness parameters of sapphire substrates as studied by atomic force microscopy and X-ray dispersion. It is shown that the functions of the central power density of the roughness height calculated from data of both methods are in good agreement. A complex approach to the surface analysis enables the stable manufacturing of plates with the effective roughness height less than 0.2 nm, which is not inferior to data given in the specification of the producers outside Russia
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