Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry

Abstract

Four-parameter fitting of multiple-angle-of-incidence (MAI) ellipsometry data is developed to characterize near-surface layers on semiconductors damaged by implantation. We used coupled half-Gaussians to describe the damage depth profiles. The method was tested on Ge-implanted silicon layers (at a wavelength of 632.8 nm) and was cross-checked with high depth resolution RBS and channeling.