Nondestructive characterization of SIMOX structures

Abstract

In this paper we show how the technique of microscope-spectrophotometry (MSP) may be used to characterize SIMOX structures nondestructively. A range of SIMOX materials prepared using various implantation conditions were investigated. The structural parameters elucidated using MSP included: silicon overlayer and buried oxide thicknesses; approximate densities of silicon islands in the buried oxide layer and silicon dioxide islands in the silicon overlayer as appropriate. These results compared favourably with those obtained using XTEM and indicates that MSP is a reliable technique for the nondestructive, three dimensional characterization of complex multi-layer structures. Furthermore, the technique is capable of examining very small areas (1 μm) which should enable device structures and local inhomogeneities to be characterized.