Abstract
Non-contact wafer thickness measurement with the CAV424 capacitance sensor special integrated circuit and arc pole plate capacitor sensor has good stability and linearity under low capacity of the bottom of sensor and lowe C condition. This method has a high technical advantages and practical value. Two capacitance sensors Cb, Ca measurement spacing 4mm install at the same axis which constitutes the size condition for measuring thickness. The static capacity of Ca and Cb is a constant value. The capacity of Cb and Ca will change when the silicon wafer is involved. This change is checked by the CAV424 capacitive sensor which has better linearity and higher thickness resolution.
Highlights
Semiconductor silicon non-contact thickness measurement has higher difficulty and practical value
Raises the capacitance of Ca and Cb which is processed by the CAV424 capacitance sensor analog circuit and gets an voltage output signal Vb out and Va out.The difference of voltage indicates the difference of capacity Ca and Cb which is related to the thickness T
The a and b in the formula are the distance from the capacitance sensor a or b to the silicon wafer
Summary
Semiconductor silicon non-contact thickness measurement has higher difficulty and practical value. Two capacitive sensors a and b are spaced at a fixed distance D At this point the capacitance of a and b is a based static value Ca and Cb. The thickness of the silicon wafer in the D interval is T. It. The a and b in the formula are the distance from the capacitance sensor a or b to the silicon wafer. The a and b in the formula are the distance from the capacitance sensor a or b to the silicon wafer When the dielectric constant and the area of the plate are fixed, the distance is the single value function of capacitance variable C. The characteristic capacitance sensor applications can measure effectively. [9] [10]
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